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| SMD Type Silicon NPN Epitaxial Planar Type 2SD1820 Transistors IC Features Low collector-emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 30 25 5 500 1 150 150 -55 to +150 Unit V V V mA A mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO hFE Testconditons IC = 10 iA, IE = 0 IC = 2 mA, IB = 0 IE = 10 iA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 150 mA 85 0.35 200 6 15 Min 30 25 5 0.1 340 0.6 V MHz pF Typ Max Unit V V V iA VCE(sat) IC = 300 mA, IB = 30 mA fT Cob VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE WQ Q 85 170 WR R 120 240 WS S 170 340 www.kexin.com.cn 1 |
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